Confinement in MeV Au2+ implanted Si: A Raman scattering study

Abstract

Structural modifications in silicon matrix due to heavy ion (Au 2+) implantation are studied using mainly Raman spectroscopy and x-ray diffraction (XRD) method. Raman spectra show a red-shift in their peak position along with line-width broadening with respect to increase in implantation fluence. This is explained taking both phonon confinement and stress into account. Heavy ion implantation introduces tensile stress in the silicon matrix. The amount of stress produced as a function of fluence has been calculated. A proposed model explaining the Raman shift and peak broadening is discussed in detail. XRD results also go in-line with the above analysis. © 2014 Vietnam Academy of Science and Technology.