Fabrication and optical properties of decorated silicon nanowires

Abstract

Well aligned Silicon Nanowires (SiNWs) are successfully fabricated by metal induced etching (MIE) technique. Role of Silver nanoparticles (AgNPs) on the porosification of Silicon has also been studied. SEM images confirm the nanostructures formed in the sample. Photoluminescence (PL) has been carried out to see quantum confinement effect in SiNWs samples. Further effect of metal nanoparticle decoration on SiNWs is studied. EDS spectroscopy confirmed the presence of MNPs on SiNWs. A significant shift in the PL energy is observed after decoration. An appreciable enhancement in absorption spectra of decorated SiNWs observed which has potential to be used in solar cell applications for light trapping purpose.