Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/9077
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dc.contributor.authorKumar, Sourabhen_US
dc.contributor.authorPathak, Biswarupen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:30:57Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:30:57Z-
dc.date.issued2018-
dc.identifier.citationMondal, C., Kumar, S., & Pathak, B. (2018). Topologically protected hybrid states in graphene-stanene-graphene heterojunctions. Journal of Materials Chemistry C, 6(8), 1920-1925. doi:10.1039/c7tc05212jen_US
dc.identifier.issn2050-7534-
dc.identifier.otherEID(2-s2.0-85042604744)-
dc.identifier.urihttps://doi.org/10.1039/c7tc05212j-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/9077-
dc.description.abstractA gapless conducting boundary state is one of the salient features of time-reversal-invariant topological insulators (TIs), which have attracted a lot of interest due to their fundamental importance and practical applications. Achieving robust non-trivial edge channels at the solid-state interface is a crucial step towards functional junction-based modern electronic devices. Here, we report a van der Waals heterostructure based graphene-stanene-graphene (C-Sn-C) quantum wall (QW), which shows a topologically protected hybrid state at the graphene-stanene interface. The inverted band ordering and metallic edge states confirm the non-trivial band topology with a non-trivial band gap of 0.15 eV, which is considerably higher than that of stanene. We find that the hybrid state in the QW provides topological protection in graphene. The high carrier mobility of graphene and the QSH state of stanene may coexist in the C-Sn-C system and that could pave the way to novel spin-based electronic devices. © 2018 The Royal Society of Chemistry.en_US
dc.language.isoenen_US
dc.publisherRoyal Society of Chemistryen_US
dc.sourceJournal of Materials Chemistry Cen_US
dc.subjectAcoustic generatorsen_US
dc.subjectElectronic equipmenten_US
dc.subjectEnergy gapen_US
dc.subjectHeterojunctionsen_US
dc.subjectInterface statesen_US
dc.subjectQuantum theoryen_US
dc.subjectThermoelectric equipmenten_US
dc.subjectTinen_US
dc.subjectTin compoundsen_US
dc.subjectTopologyen_US
dc.subjectVan der Waals forcesen_US
dc.subjectBand orderingen_US
dc.subjectBoundary stateen_US
dc.subjectEdge channelsen_US
dc.subjectElectronic deviceen_US
dc.subjectHigh carrier mobilityen_US
dc.subjectSalient featuresen_US
dc.subjectTopological insulatorsen_US
dc.subjectVan der waalsen_US
dc.subjectGrapheneen_US
dc.titleTopologically protected hybrid states in graphene-stanene-graphene heterojunctionsen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Chemistry

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