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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kumar, Sourabh | en_US |
dc.contributor.author | Pathak, Biswarup | en_US |
dc.date.accessioned | 2022-03-17T01:00:00Z | - |
dc.date.accessioned | 2022-03-21T11:30:57Z | - |
dc.date.available | 2022-03-17T01:00:00Z | - |
dc.date.available | 2022-03-21T11:30:57Z | - |
dc.date.issued | 2018 | - |
dc.identifier.citation | Mondal, C., Kumar, S., & Pathak, B. (2018). Topologically protected hybrid states in graphene-stanene-graphene heterojunctions. Journal of Materials Chemistry C, 6(8), 1920-1925. doi:10.1039/c7tc05212j | en_US |
dc.identifier.issn | 2050-7534 | - |
dc.identifier.other | EID(2-s2.0-85042604744) | - |
dc.identifier.uri | https://doi.org/10.1039/c7tc05212j | - |
dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/9077 | - |
dc.description.abstract | A gapless conducting boundary state is one of the salient features of time-reversal-invariant topological insulators (TIs), which have attracted a lot of interest due to their fundamental importance and practical applications. Achieving robust non-trivial edge channels at the solid-state interface is a crucial step towards functional junction-based modern electronic devices. Here, we report a van der Waals heterostructure based graphene-stanene-graphene (C-Sn-C) quantum wall (QW), which shows a topologically protected hybrid state at the graphene-stanene interface. The inverted band ordering and metallic edge states confirm the non-trivial band topology with a non-trivial band gap of 0.15 eV, which is considerably higher than that of stanene. We find that the hybrid state in the QW provides topological protection in graphene. The high carrier mobility of graphene and the QSH state of stanene may coexist in the C-Sn-C system and that could pave the way to novel spin-based electronic devices. © 2018 The Royal Society of Chemistry. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Royal Society of Chemistry | en_US |
dc.source | Journal of Materials Chemistry C | en_US |
dc.subject | Acoustic generators | en_US |
dc.subject | Electronic equipment | en_US |
dc.subject | Energy gap | en_US |
dc.subject | Heterojunctions | en_US |
dc.subject | Interface states | en_US |
dc.subject | Quantum theory | en_US |
dc.subject | Thermoelectric equipment | en_US |
dc.subject | Tin | en_US |
dc.subject | Tin compounds | en_US |
dc.subject | Topology | en_US |
dc.subject | Van der Waals forces | en_US |
dc.subject | Band ordering | en_US |
dc.subject | Boundary state | en_US |
dc.subject | Edge channels | en_US |
dc.subject | Electronic device | en_US |
dc.subject | High carrier mobility | en_US |
dc.subject | Salient features | en_US |
dc.subject | Topological insulators | en_US |
dc.subject | Van der waals | en_US |
dc.subject | Graphene | en_US |
dc.title | Topologically protected hybrid states in graphene-stanene-graphene heterojunctions | en_US |
dc.type | Journal Article | en_US |
Appears in Collections: | Department of Chemistry |
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