Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/9426
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dc.contributor.authorPathak, Biswarupen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:32:59Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:32:59Z-
dc.date.issued2013-
dc.identifier.citationLi, Y., De Sarkar, A., Pathak, B., & Ahuja, R. (2013). Strain-induced stabilization of al functionalization in graphene oxide nanosheet for enhanced NH3 storage. Applied Physics Letters, 102(24) doi:10.1063/1.4811494en_US
dc.identifier.issn0003-6951-
dc.identifier.otherEID(2-s2.0-84879827998)-
dc.identifier.urihttps://doi.org/10.1063/1.4811494-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/9426-
dc.description.abstractStrain effects on the stabilization of Al ad-atom on graphene oxide (GO) nanosheet as well as its implications for NH3 storage have been investigated using first-principles calculations. Tensile strain is found to be very effective in stabilizing the Al ad-atom on GO. It strengthens the C-O bonds through an enhanced charge transfer from C to O atoms. Interestingly, Al's stability is governed by the bond strength of C-O rather than that of Al-O. Optimally strained Al-functionalized GO binds up to 6 NH3 molecules, while it binds no NH3 molecule in unstrained condition. © 2013 AIP Publishing LLC.en_US
dc.language.isoenen_US
dc.sourceApplied Physics Lettersen_US
dc.subjectFirst-principles calculationen_US
dc.subjectFunctionalizationsen_US
dc.subjectGraphene oxide nanosheeten_US
dc.subjectGraphene oxide nanosheetsen_US
dc.subjectStrain effecten_US
dc.subjectAtomsen_US
dc.subjectCalculationsen_US
dc.subjectGrapheneen_US
dc.subjectMoleculesen_US
dc.subjectStabilizationen_US
dc.subjectAluminumen_US
dc.titleStrain-induced stabilization of Al functionalization in graphene oxide nanosheet for enhanced NH3 storageen_US
dc.typeJournal Articleen_US
dc.rights.licenseAll Open Access, Green-
Appears in Collections:Department of Chemistry

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