Please use this identifier to cite or link to this item:
https://dspace.iiti.ac.in/handle/123456789/1041
Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Meena, Rishikesh | en_US |
| dc.contributor.author | Kranti, Abhinav [Guide] | en_US |
| dc.date.accessioned | 2018-01-25T10:44:45Z | - |
| dc.date.available | 2018-01-25T10:44:45Z | - |
| dc.date.issued | 2017-12-08 | - |
| dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/1041 | - |
| dc.language.iso | en | en_US |
| dc.publisher | Discipline of Electrical Engineering, IIT Indore | en_US |
| dc.relation.ispartofseries | BTP331;EE 2017 MEE | - |
| dc.subject | Electrical Engineering | en_US |
| dc.title | Impact of dopant location on the performance of nanoscale devices | en_US |
| dc.type | B.Tech Project | en_US |
| Appears in Collections: | Department of Electrical Engineering_BTP | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| BTP_331_Rishikesh_Meena_140002026.pdf | 1.03 MB | Adobe PDF | ![]() View/Open |
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