Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/10474
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dc.contributor.authorChoyal, Vijay K.en_US
dc.contributor.authorKundalwal, Shaileshen_US
dc.date.accessioned2022-07-15T10:40:08Z-
dc.date.available2022-07-15T10:40:08Z-
dc.date.issued2022-
dc.identifier.citationChoyal, V. K., & Kundalwal, S. I. (2022). Electromechanical response of stacked h-BN layers: A computational study. Diamond and Related Materials, 126. Scopus. https://doi.org/10.1016/j.diamond.2022.109126en_US
dc.identifier.issn0925-9635-
dc.identifier.otherEID(2-s2.0-85130559848)-
dc.identifier.urihttps://doi.org/10.1016/j.diamond.2022.109126-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/10474-
dc.description.abstractIn the current investigation, molecular dynamics simulations were performed to determine the electromechanical response of multi-layer boron nitride sheets (MLBNSs) with the consideration of different numbers of stacked layers, strain rate (SR), temperature and chirality effects, and fracture behavior subjected to uniaxial tensile tests. We found the stress–strain curves and evaluated the elastic modulus, fracture strain, and maximum tensile strength in the armchair (AC) and zigzag (ZZ) directions of BNSs. We assessed the impact of two parameters (number of stacked layers and chirality effect) on the tensile properties of BNSs by comparing the findings at various temperatures and SRs. In addition, our study reveals that MLBNSs with an odd number of BN layers show piezoelectric behavior, whereas an even number of BN layers do not show piezoelectric behavior. The piezo- and flexo-electric coefficients of MLBNSs depend on the following aspects: (i) they have an inverse relationship with the number of BN layers, (ii) even or odd numbers of BN layers, and (iii) they disappear completely when the number of BN layers exceeds ten. The present investigation motivates us to develop high-performance and lightweight piezoelectric BN-based NEMS such as nanogenerators, sensors, and actuators, as the existing piezoelectric nanomaterials are brittle, heavy, and toxic. © 2022 Elsevier B.V.en_US
dc.language.isoenen_US
dc.publisherElsevier Ltden_US
dc.sourceDiamond and Related Materialsen_US
dc.subjectBoron nitrideen_US
dc.subjectChiralityen_US
dc.subjectFractureen_US
dc.subjectFracture mechanicsen_US
dc.subjectIII-V semiconductorsen_US
dc.subjectNitridesen_US
dc.subjectPiezoelectric actuatorsen_US
dc.subjectPiezoelectricityen_US
dc.subjectStrain rateen_US
dc.subjectTensile strengthen_US
dc.subjectTensile testingen_US
dc.subjectBoron nitride nanosheetsen_US
dc.subjectBoron nitride sheetsen_US
dc.subjectElastic propertiesen_US
dc.subjectElectromechanical responseen_US
dc.subjectFlexoelectricen_US
dc.subjectFlexoelectric responseen_US
dc.subjectHexagonal boron nitride nanosheeten_US
dc.subjectMulti-layersen_US
dc.subjectPiezoelectric responseen_US
dc.subjectStackingsen_US
dc.subjectMolecular dynamicsen_US
dc.titleElectromechanical response of stacked h-BN layers: A computational studyen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Mechanical Engineering

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