Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/11360
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dc.contributor.authorKhan, Sajiden_US
dc.date.accessioned2023-02-27T15:27:41Z-
dc.date.available2023-02-27T15:27:41Z-
dc.date.issued2022-
dc.identifier.citationNaz, S. F., Khan, S., & Shah, A. P. (2022). Pass transistor XOR gate based radiation hardened RO-PUF doi:10.1007/978-3-031-21514-8_28 Retrieved from www.scopus.comen_US
dc.identifier.isbn978-3031215131-
dc.identifier.issn1865-0929-
dc.identifier.otherEID(2-s2.0-85145009927)-
dc.identifier.urihttps://doi.org/10.1007/978-3-031-21514-8_28-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/11360-
dc.description.abstractHardware security is important and need of the hour particularly for low cost electronic devices. Hardware-based encryption designs such as physically unclonable functions (PUFs) outperform any known software-based cryptography technique in terms of attack deterrence. This paper proposes a novel design of Three-Transistor (3T) XOR gate based ring-oscillator (RO) PUF. This XOR gate is used as its main element because of its high critical charge than those present in the literature. The critical charge of this XOR gate being 35.52% higher as compared to the inverter. The 3T XOR gate based PUF is then designed with improved uniqueness and reliability at different operating temperatures. The uniqueness of the proposed PUF design is 0.4958 which is better as compared to other counterparts. © 2022, The Author(s), under exclusive license to Springer Nature Switzerland AG.en_US
dc.language.isoenen_US
dc.publisherSpringer Science and Business Media Deutschland GmbHen_US
dc.sourceCommunications in Computer and Information Scienceen_US
dc.subjectHardware securityen_US
dc.subjectCritical chargeen_US
dc.subjectElectronics devicesen_US
dc.subjectLow-cost electronicsen_US
dc.subjectNovel designen_US
dc.subjectPass transistorsen_US
dc.subjectPhysically unclonable functionsen_US
dc.subjectRadiation-hardeneden_US
dc.subjectRing oscillatoren_US
dc.subjectUniquenessen_US
dc.subjectXOR gatesen_US
dc.subjectCryptographyen_US
dc.titlePass Transistor XOR Gate Based Radiation Hardened RO-PUFen_US
dc.typeConference Paperen_US
Appears in Collections:Department of Electrical Engineering

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