Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/11360
Title: Pass Transistor XOR Gate Based Radiation Hardened RO-PUF
Authors: Khan, Sajid
Keywords: Hardware security;Critical charge;Electronics devices;Low-cost electronics;Novel design;Pass transistors;Physically unclonable functions;Radiation-hardened;Ring oscillator;Uniqueness;XOR gates;Cryptography
Issue Date: 2022
Publisher: Springer Science and Business Media Deutschland GmbH
Citation: Naz, S. F., Khan, S., & Shah, A. P. (2022). Pass transistor XOR gate based radiation hardened RO-PUF doi:10.1007/978-3-031-21514-8_28 Retrieved from www.scopus.com
Abstract: Hardware security is important and need of the hour particularly for low cost electronic devices. Hardware-based encryption designs such as physically unclonable functions (PUFs) outperform any known software-based cryptography technique in terms of attack deterrence. This paper proposes a novel design of Three-Transistor (3T) XOR gate based ring-oscillator (RO) PUF. This XOR gate is used as its main element because of its high critical charge than those present in the literature. The critical charge of this XOR gate being 35.52% higher as compared to the inverter. The 3T XOR gate based PUF is then designed with improved uniqueness and reliability at different operating temperatures. The uniqueness of the proposed PUF design is 0.4958 which is better as compared to other counterparts. © 2022, The Author(s), under exclusive license to Springer Nature Switzerland AG.
URI: https://doi.org/10.1007/978-3-031-21514-8_28
https://dspace.iiti.ac.in/handle/123456789/11360
ISBN: 978-3031215131
ISSN: 1865-0929
Type of Material: Conference Paper
Appears in Collections:Department of Electrical Engineering

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