Common Source Amplifier and Ring Oscillator Circuit Performance Optimization Using Multi-Bridge Channel FETs

Abstract

In this paper the DC, analog/RF device and circuit applications of nanosheet (NS) FET is performed. To enhance power performance co-optimization geometry parameters like NS width (NSW) and NS thickness (NSH) are varied for high performance (HP) and low power (LP) applications. A rise in 1.47x in I ON and a rise of 5.8x in I OFF is noticed with increase in NSH due to enlarged effective width (W eff). In addition, a rise of 3.8x in I ON and a fall of 76.4% in I OFF is noticed with higher NSW. Larger the NSW ensures better transconductance (gm), transconductance generation factor (TGF), cut-off frequency (f T), gain-band width product (GBW), transconductance frequency product (TFP), and intrinsic delay (τ). The optimized supply voltage (V DD) for maximum voltage gain of common source (CS) amplifier and 3 stage ring oscillators (RO) with varied NSW is performed. Moreover, the impact of number of stages (N) of 3 stage RO for better frequency of oscillations (f OSC) is studied towards high frequency circuit applications. © 2023 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited.