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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/12983
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dc.contributor.authorPatel, Chandrabhanen_US
dc.contributor.authorDubey, Mayanken_US
dc.contributor.authorChaudhary, Sumiten_US
dc.contributor.authorKumar, Vikashen_US
dc.contributor.authorMukherjee, Shaibalen_US
dc.date.accessioned2023-12-22T09:19:04Z-
dc.date.available2023-12-22T09:19:04Z-
dc.date.issued2023-
dc.identifier.citationRani, C., Tanwar, M., Ghosh, T., Kandpal, S., Saxena, S. K., & Kumar, R. (2023). Non-linear temperature dependent Raman parametric changes: An identification of Fano intervened systems. Physics Reports. Scopus. https://doi.org/10.1016/j.physrep.2023.09.007en_US
dc.identifier.isbn979-8350333466-
dc.identifier.issn1944-9399-
dc.identifier.otherEID(2-s2.0-85173592103)-
dc.identifier.urihttps://doi.org/10.1109/NANO58406.2023.10231184-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/12983-
dc.description.abstractRecently unprecedented interest has been immersed towards the synthesis of two-dimensional (2D) transition metal dichalcogenides via chemical vapor deposition (CVD) system. Synthesis of uniform and large-sized monolayer MoS2 atomic thin film via CVD is still a major bottleneck owing to strong dependence on diverse associated growth parameters. In this work, we have investigated the effect of individual carrier gas during MoS2 growth and its flow rate. Selection of Ar carrier gas with flow rate 150 sccm is the optimum amount to obtain the largest triangular MoS2. While N2 as a carrier gas with 150 sccm is help to deposit dendrite MoS2 flakes. In addition, mixture of Ar and N2 gases in 2:1 ratio during MoS2 growth is suitable to deposit large and uniform monolayer of MoS2. © 2023 IEEE.en_US
dc.language.isoenen_US
dc.publisherIEEE Computer Societyen_US
dc.sourceProceedings of the IEEE Conference on Nanotechnologyen_US
dc.subjectcarrier gasen_US
dc.subjectChemical vapor depositionen_US
dc.subjectMoS2en_US
dc.titleRole of Carrier Gas and its Flow Rate to Produce Uniform, Large-Sized MoS2Monolayer via CVDen_US
dc.typeConference Paperen_US
Appears in Collections:Department of Electrical Engineering

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