Role of Carrier Gas and its Flow Rate to Produce Uniform, Large-Sized MoS2Monolayer via CVD

Abstract

Recently unprecedented interest has been immersed towards the synthesis of two-dimensional (2D) transition metal dichalcogenides via chemical vapor deposition (CVD) system. Synthesis of uniform and large-sized monolayer MoS2 atomic thin film via CVD is still a major bottleneck owing to strong dependence on diverse associated growth parameters. In this work, we have investigated the effect of individual carrier gas during MoS2 growth and its flow rate. Selection of Ar carrier gas with flow rate 150 sccm is the optimum amount to obtain the largest triangular MoS2. While N2 as a carrier gas with 150 sccm is help to deposit dendrite MoS2 flakes. In addition, mixture of Ar and N2 gases in 2:1 ratio during MoS2 growth is suitable to deposit large and uniform monolayer of MoS2. © 2023 IEEE.