Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/14045
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dc.contributor.authorSemwal, Sandeepen_US
dc.contributor.authorRai, Niveditaen_US
dc.contributor.authorNirala, Rohit Kumaren_US
dc.contributor.authorKranti, Abhinaven_US
dc.date.accessioned2024-07-18T13:48:28Z-
dc.date.available2024-07-18T13:48:28Z-
dc.date.issued2024-
dc.identifier.citationSemwal, S., Rai, N., Nirala, R. K., Gupta, M., & Kranti, A. (2024). Quantum Confinement Imposed Constraints in ULP Circuits with Junctionless FET. IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024. Scopus. https://doi.org/10.1109/EDTM58488.2024.10511949en_US
dc.identifier.isbn979-8350371529-
dc.identifier.otherEID(2-s2.0-85193284681)-
dc.identifier.urihttps://doi.org/10.1109/EDTM58488.2024.10511949-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/14045-
dc.description.abstractThe interplay between quantum confinement (QC) and parameter variations in ultralow power (ULP) inverter and Schmitt trigger (ST) with nanowire junctionless transistor is evaluated. Process variations under QC lead to enhanced threshold voltage (V_TH) variability which degrades noise margin of ULP inverter. Similarly, QC induced higher VTH variation in n- or p-subcircuit degrades hysteresis width of ULP ST. Process variations under QC need to be carefully analyzed for optimum performance for ULP applications. © 2024 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceIEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024en_US
dc.subjectCMOS Inverteren_US
dc.subjectJunctionless Transistoren_US
dc.subjectQuantum confinementen_US
dc.subjectSchmitt Triggeren_US
dc.subjectUltralow Poweren_US
dc.titleQuantum Confinement Imposed Constraints in ULP Circuits with Junctionless FETen_US
dc.typeConference Paperen_US
Appears in Collections:Department of Electrical Engineering

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