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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/1436
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dc.contributor.authorRohi, Ananditaen_US
dc.contributor.authorKranti, Abhinav [Guide]en_US
dc.date.accessioned2019-01-18T11:44:27Z-
dc.date.available2019-01-18T11:44:27Z-
dc.date.issued2018-12-07-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/1436-
dc.language.isoenen_US
dc.publisherDiscipline of Electrical Engineering, IIT Indoreen_US
dc.relation.ispartofseriesBTP387;EE 2018 ROH-
dc.subjectElectrical Engineeringen_US
dc.titleEffect of parasitic capacitance on analog/RF performance of MOS transistorsen_US
dc.typeB.Tech Projecten_US
Appears in Collections:Department of Electrical Engineering_BTP

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