Photoconductive terahertz emitter

Abstract

This thesis presents a comprehensive study on the optimization of terahertz emitters through various design modifications aimed at enhancing performance, reducing power consumption, and mitigating heating effects. The investigation focused on three distinct designs: one without an oxide layer, one incorporating an oxide layer, and the most advanced design integrating germanium on silicon. The germanium on silicon design emerged as the superior configuration, demonstrating a remarkable reduction in dark current by up to 99%, resulting in a dark current of just 226 μA. This significant decrease in dark current led to improved power efficiency, minimized heating effects, and the capability to apply higher operational voltages, which collectively enhance the terahertz generation efficiency. The simulation results confirmed that the germanium on silicon design is optimal for advanced terahertz emitters, effectively balancing low dark current, reduced heating, and enhanced terahertz output. This study provides a significant advancement in terahertz technology, presenting a practical and efficient solution for high-performance terahertz systems.