Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/15639
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dc.contributor.authorChaudhary, Sumiten_US
dc.contributor.authorPatel, Chandrabhanen_US
dc.contributor.authorMahapatra, Brahmaduttaen_US
dc.contributor.authorDubey, Mayank Manojen_US
dc.contributor.authorVerma, Vikash Kumaren_US
dc.contributor.authorMukherjee, Shaibalen_US
dc.date.accessioned2025-02-04T14:30:53Z-
dc.date.available2025-02-04T14:30:53Z-
dc.date.issued2025-
dc.identifier.citationChaudhary, S., Patel, C., Mahapatra, B., Dubey, M., Verma, V. K., Kumar, P., Ako, R. T., Sriram, S., & Mukherjee, S. (2025). CVD-grown MoS2 Monolayer based Ultrasensitive Hg2+ Ion Sensing in Water. IEEE Sensors Journal. Scopus. https://doi.org/10.1109/JSEN.2025.3526719en_US
dc.identifier.issn1530-437X-
dc.identifier.otherEID(2-s2.0-85215669626)-
dc.identifier.urihttps://doi.org/10.1109/JSEN.2025.3526719-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/15639-
dc.description.abstractMercury (Hg) is widely acknowledged as one of the most hazardous heavy metals, even in trace amounts. Its presence poses risks of both chronic and acute poisoning, leading to serious health issues including cancer, nerve damage, acrodynia, and movement disorders, which can ultimately result in fatalities. Current mercury sensing devices have several disadvantages, including sluggish response times, high cost, and limited portability. In this study, we present an interdigitated electrode-based sensor with molybdenum disulfide (MoS2) as the sensing layer to detect trace amounts of toxic Hg2+ ions. The MoS2 layer has been synthesized using a chemical vapor deposition system and transferred to the interdigitated device through an energy-assisted wet transfer method. Comprehensive characterizations have confirmed the successful synthesis and transfer onto the IDE device. The fabricated sensor exhibits remarkable performance with excellent selectivity towards Hg2+ ions, an impressive limit of detection of 27.9 ppt, remarkable sensitivity of 957 μA/ppb, and a quick response time of less than 4 s. © 2001-2012 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceIEEE Sensors Journalen_US
dc.subjectCVDen_US
dc.subjectHg<sup>2+</sup>en_US
dc.subjectMoS<sub>2</sub>en_US
dc.subjectselectivityen_US
dc.subjectsensitivityen_US
dc.titleCVD-grown MoS2 Monolayer based Ultrasensitive Hg2+ Ion Sensing in Wateren_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Electrical Engineering

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