Magneto-transport in 2D materials

Abstract

Two-dimensional (2D) materials have emerged as a fascinating platform for exploring novel electronic and transport phenomena, particularly in the presence of magnetic fields. These materials show exceptional electronic properties that provide insight into the band structure and quantities such as carrier mobility, fermi surface, and relaxation time, which are some key elements for understanding the transport properties of solids. To study the transport properties in 2D materials, we chose transition metal chalcogenides (TMC) particularly TiSe2, ZrSe2, and ZrSe3 and prepared the single crystals of these materials in our laboratory using two-zone furnace. To confirm the purity of our samples, we carried out techniques such as X-ray spectroscopy, Raman spectroscopy, and Energy dispersive spectroscopy. We performed XRD to confirm the crystal structure, Raman for phase verification and EDS to confirm the composition of elements in our samples. We also carried out resistivity (ρ) vs temperature (T) measurement to investigate the electronic properties and, at last, we did magnetoresistance (MR) vs magnetic field (H) measurement to study and analyze the effect of magnetic field on the properties of the materials. From this we observed that TiSe2 is very sensitive to its synthesis process and growth conditions, which can results in distinct properties, which we observed in our polycrystalline samples. Also, TiSe2 showed properties like Charge Density Wave (CDW) and Metal-Insulator Transition (MIT) in its single crystal form. We also observed that ZrSe2 shows metallic behavior in both polycrystalline and single crystal forms which directly contradicts its natural character, as it is a semiconductor by nature. These materials and the dependence of their properties on the surrounding can provide some exceptional information about their electronic properties and can help us to understand their behavior in different external conditions.