EXPLORING THE IMPACT OF PROCESS PARAMETERS ON LASER µ-3D PRINTING OF SILICON CARBIDE FOR HIGH-PRECISION APPLICATIONS

Abstract

Silicon carbide (SiC) is widely utilized in microelectromechanical systems (MEMS) due to its exceptional mechanical strength, thermal stability, and electrical properties. It is commonly employed in MEMS applications as electrodes, interconnects, or actuators, where its superior sensing capabilities are critical for device performance. Traditionally, these essential components are fabricated using standard lithography techniques, which, although effective, involve complex, time-consuming chemical processes that can hinder scalability and production efficiency. As an alternative, laser decal transfer-assisted micro-3D printing presents a promising approach for manufacturing such components. This technique provides a highly versatile and cost-effective solution, enabling the fabrication of intricate, high-precision structures required for MEMS devices while significantly reducing processing time and complexity. In this study, a laser-based micro-3D printing (µ-3D printing) method was employed to fabricate micron-scale silicon carbide structures. This technique leverages precise laser-material interactions to achieve accurate three-dimensional geometries with improved resolution and efficiency. The experimental procedure involved optimizing key processing parameters, particularly the stand-off distance (SOD)-defined as the distance between the laser focus and the donor substrate-and the donor-to-acceptor substrate gap. These parameters were systematically varied from 9 to 12 cm and a gap of nil, 25 µm, and 50 µm, respectively, to assess their impact on the quality and uniformity of material transfer. The results indicate that an optimal stand-off distance of 10 cm, combined with a zero-gap donor-to-acceptor substrate configuration, yields the most consistent and defect-free material transfer. Under these conditions, the laser intensity at the donor-acceptor interface is sufficiently high to ensure effective SiC ejection without introducing structural defects or irregularities. However, when the stand-off distance exceeds 10 cm, the effective laser intensity at the interface diminishes, leading to incomplete or inconsistent material transfer. Furthermore, increasing the donor-to-acceptor gap beyond 25 µm has a detrimental effect on transfer precision. A larger gap can result in excessive material spattering, which not only compromises the accuracy of the printed features but also introduces surface defects, thereby reducing the overall quality of the fabricated structures. The successfully printed structures, including continuous SiC line tracks, demonstrate the feasibility of utilizing laser micro-3D printing for MEMS component fabrication. These printed tracks exhibit the resolution and reproducibility necessary for the precise design and development of sophisticated MEMS devices. The ability to fabricate such intricate structures with high accuracy underscores the potential of laser-based micro-3D printing as a transformative technology in MEMS manufacturing. By overcoming the limitations of conventional lithography, this technique enables the scalable production of complex SiC-based MEMS devices, facilitating advancements in critical sensing applications and other high-performance microsystems. © © 2025 by ASME.