Design of wide band power amplifier

Abstract

Wideband, high-efficiency power amplifiers (PAs) must be developed in order to meet the growing need for multi-band and highdata-rate wireless communication systems. The design and execution of a wideband power amplifier with a multi-octave bandwidth that operates between 0.45 GHz and 2.9 GHz are presented in this thesis. The Advanced Design System (ADS) is used to carry out the design, and both simulation and hardware realization are used to validate it. CGH40010F GaN HEMT transistor, selected for its outstanding power handling capability and efficiency, is used in the suggested amplifier. A appropriate impedance matching network is constructed in conjunction with extended continuous mode-inspired harmonic tuning approaches to achieve broadband performance. High efficiency throughout a broad frequency range is made possible by this method’s efficient regulation of fundamental and harmonic impedances. The simulated findings of the amplifier show good agreement. Throughout the operating band, it attains maximum output power of 40.8 dBm, maximum power-added efficiency (PAE) of 58.19 percentage, and maximum drain efficiency of 60.3 percentage. Furthermore, the amplifier exhibits steady and effective performance in both linear and nonlinear operating circumstances, with a small-signal gain of 13.6 dB and a large-signal gain of 12.13 dB. The findings verify that the suggested wideband power amplifier is a good fit for contemporary RF applications where high efficiency and broad frequency coverage are essential, such as wireless communication systems, radar, and broadband transmitters.