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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/2199
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dc.contributor.authorGupta, Ashutoshen_US
dc.contributor.authorShirage, Parasharam M. [Guide]en_US
dc.date.accessioned2020-02-15T11:49:54Z-
dc.date.available2020-02-15T11:49:54Z-
dc.date.issued2019-12-04-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/2199-
dc.language.isoenen_US
dc.publisherDiscipline of Metallurgy Engineering and Materials Science, IIT Indoreen_US
dc.relation.ispartofseriesBTP568;MEMS 2019 GUP-
dc.subjectMetallurgy Engineering and Materials Scienceen_US
dc.titleOptimisation and effective GaN Surface passivation by plasma enhanced chemical vapor deposition of silicon oxideen_US
dc.typeB.Tech Projecten_US
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