Exploring the ultimate speed of threshold switching in phase change memory devices

Abstract

This thesis work is aimed to address the critical issues discussed in previous section. Materials of family-I located at GeTe-Sb2Te3 pseudobinary line are most studied and utilized in commercial products. Therefore, these are considered as important materials for investigation of ultrafast switching dynamics. Also, In3Sb1Te2 being novel in terms of combined property-folio of rapid crystallization as well as better thermal stability, is further considered for investigation of ultrafast switching dynamics. 1. Investigation of threshold switching dynamics of GeTe-Sb2Te3 pseudo-binary phase change memory devices and understanding the effect of material composition on the performance characteristics of device (Chapter 4). 2. Investigation of low power threshold switching and voltage dependent threshold switching dynamics of GeSb2Te4 phase change memory devices (Chapter 5). 3. Investigation of ultrafast threshold switching dynamics of Ge2Sb2Te5 phase change memory devices (Chapter 6). 4. Investigation of improved thermal stability, low power and ultrafast threshold switching dynamics in stoichiometric In3Sb1Te2 phase change memory devices for universal memory (Chapter 7). 5. Developing an in-depth understanding on the threshold switching mechanism and dynamics of various phase change materials and families (Chapter 8).