Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/3028
Title: Structural, opto-electronic, electrical and photosensing properties of Ga and Ga-Si codoped ZnO
Authors: Kissinquinker, Bungkiu
Supervisors: Sen, Somaditya
Keywords: Physics
Issue Date: 28-Jun-2020
Publisher: Department of Physics, IIT Indore
Series/Report no.: MS244
Abstract: 2360 oC with a heat capacity of 9.62cal/deg/mole at 25oC. Its molecular weight is 81.38 g/mol with a relative density of 5.607 g-cm-3 . 1.2.2 Optical Properties: Pure ZnO is expected to be transparent to light in the visible region but absorbs ultra violet light. This property is due to ZnO having an optical bandgap of ~3.3eV at room temperature and ~3.44eV at temperatures of 4K[4] which corresponds to light in the UV region. This optical property of ZnO can be used for applications in photo detectors, solar cells, UV filters, etc. [4,5-7]. ZnO shows a sharp absorption peak near the vicinity of 380nm (UV region) in the photoluminescence spectra which is attributed to band to band transition and a broader emission band in the visible region which has been attributed to the intrinsic defects present in the ZnO structure.
URI: https://dspace.iiti.ac.in/handle/123456789/3028
Type of Material: Thesis_M.Sc
Appears in Collections:Department of Physics_ETD

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