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https://dspace.iiti.ac.in/handle/123456789/3028
Title: | Structural, opto-electronic, electrical and photosensing properties of Ga and Ga-Si codoped ZnO |
Authors: | Kissinquinker, Bungkiu |
Supervisors: | Sen, Somaditya |
Keywords: | Physics |
Issue Date: | 28-Jun-2020 |
Publisher: | Department of Physics, IIT Indore |
Series/Report no.: | MS244 |
Abstract: | 2360 oC with a heat capacity of 9.62cal/deg/mole at 25oC. Its molecular weight is 81.38 g/mol with a relative density of 5.607 g-cm-3 . 1.2.2 Optical Properties: Pure ZnO is expected to be transparent to light in the visible region but absorbs ultra violet light. This property is due to ZnO having an optical bandgap of ~3.3eV at room temperature and ~3.44eV at temperatures of 4K[4] which corresponds to light in the UV region. This optical property of ZnO can be used for applications in photo detectors, solar cells, UV filters, etc. [4,5-7]. ZnO shows a sharp absorption peak near the vicinity of 380nm (UV region) in the photoluminescence spectra which is attributed to band to band transition and a broader emission band in the visible region which has been attributed to the intrinsic defects present in the ZnO structure. |
URI: | https://dspace.iiti.ac.in/handle/123456789/3028 |
Type of Material: | Thesis_M.Sc |
Appears in Collections: | Department of Physics_ETD |
Files in This Item:
File | Description | Size | Format | |
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MS_244_Bungkiu_Kissinquinker_1803151007.pdf | 3.56 MB | Adobe PDF | ![]() View/Open |
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