Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/3307
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dc.contributor.advisorMavani, Krushna R.-
dc.contributor.authorMulchandani, Komal-
dc.date.accessioned2022-01-10T11:52:14Z-
dc.date.available2022-01-10T11:52:14Z-
dc.date.issued2022-01-03-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/3307-
dc.description.abstractThis chapter presents a brief review of the transition metal oxides and their applications in devices. The material of interest, i.e., vanadium dioxide (VO2), has been explored in detail with its fundamental properties and applications. Metal-acid contact method used to hydrogenate the films and the necessity to improve this method has been discussed in detail. A comparison with other hydrogenation methods has also been presented. The motivation and the objectives are defined towards the end of the chapter.en_US
dc.language.isoenen_US
dc.publisherDepartment of Physics, IIT Indoreen_US
dc.relation.ispartofseriesTH408-
dc.subjectPhysicsen_US
dc.titleIncorporating hydrogen and tungsten in structurally oriented VO2 thin films, and the resultant effects on physical propertiesen_US
dc.typeThesis_Ph.Den_US
Appears in Collections:Department of Physics_ETD

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