Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5196
Title: Enhanced sheet carrier density in zno based heterostructure by alloying cadmium in buffer layer zno
Authors: Khan, Md Arif
Singh, Ruchi A.
Kranti, Abhinav
Mukherjee, Shaibal
Keywords: Alloying;Buffer layers;Cadmium;Carrier concentration;Heterojunctions;II-VI semiconductors;Ion beams;Magnesium printing plates;Sputtering;Wide band gap semiconductors;Barrier layers;Cadmiums (Cd);Deposition technique;Dual ion beam sputtering;Sheet carrier densities;Zinc oxide (ZnO);Zinc oxide
Issue Date: 2019
Publisher: Springer Science and Business Media, LLC
Citation: Khan, M. A., Singh, R., Bhardwaj, R., Kranti, A., & Mukherjee, S. (2019). Enhanced sheet carrier density in zno based heterostructure by alloying cadmium in buffer layer zno. Paper presented at the Springer Proceedings in Physics, , 215 1273-1275. doi:10.1007/978-3-319-97604-4_193
Abstract: This abstract reports very high (>1014 cm−2) sheet carrier density (ns)in Zinc Oxide (ZnO) based heterostructure for low Magnesium (Mg) compositions (<0.15) in barrier layer, achieved by alloying Cadmium (Cd) in buffer layer ZnO, grown by Dual Ion Beam Sputtering (DIBS) deposition technique. © Springer Nature Switzerland AG 2019.
URI: https://doi.org/10.1007/978-3-319-97604-4_193
https://dspace.iiti.ac.in/handle/123456789/5196
ISBN: 9783319976037
ISSN: 0930-8989
Type of Material: Conference Paper
Appears in Collections:Department of Electrical Engineering

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