Characterization of Double-Gate PN Type Tunneling Field-Effect Transistor

Abstract

In this paper, we proposed an new Double-Gate (DG) PN-type tunneling field-effect transistor with exploiting induced channel layer (iTFETs) for line tunneling and low power applications (V D = 0.1V 0.05V). Unlike conventional TFET, with same type of doping in source and underneath the gate change the topology from PIN to PN TFET. We replace point tunneling with line tunneling, which can improves currents, average and minimum subthreshold swing. By using PN structure, the ambipolar effect can be effectively suppressed. Furthermore, the proposed topology improves the double and vertical gate results. These devices achieve 4.1 × 10 -7 A/μm of ON current (I ON (I d @ V G = V D ), 2.1 × 10 -17 A/μm of OFF current (I OFF (I d @ V G = 0 V), and 1.95 × 10 10 of ON/OFF current ratio (I ON /I OFF ). A minimum subthreshold swing SS avg = 12.2 mV/dec and the SS min = 5 mV/dec are obtained. © 2018 IEEE.