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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5214
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dc.contributor.authorKranti, Abhinaven_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:39:00Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:39:00Z-
dc.date.issued2018-
dc.identifier.citationLi, Y. -., Lin, J. -., Ting, Y. -., & Kranti, A. (2018). Recessed-gate PN iTFET to improve subthreshold swing and suppress ambipolar. Paper presented at the 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings, doi:10.1109/ICSICT.2018.8564949en_US
dc.identifier.isbn9781538644409-
dc.identifier.otherEID(2-s2.0-85060280223)-
dc.identifier.urihttps://doi.org/10.1109/ICSICT.2018.8564949-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5214-
dc.description.abstractIn this paper, we propose a new structure of Recessed-Gated-PN TFET with help by Inversion layer and pocket layer (RGPN iTFET) to achieve a great subthreshold swing (SS). The RGPN iTFET has also many advantages, as eliminating ambipolar effect, suppressing trap-assisted tunneling (TAT), raising ON current (I ON (I d @ V G = V D ) and having a much better SS. The simulation results show that our device can reach I ON = 1.61×10 -7 A/um, I ON /I OFF > 3.5×10 7 at V D =0.1V and a minimum and average SS (SS min and SS ave ) of 11.4 and 24 mv/decade respectively. © 2018 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.source2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedingsen_US
dc.subjectIntegrated circuitsen_US
dc.subjectAmbipolaren_US
dc.subjectOn currentsen_US
dc.subjectRecessed gateen_US
dc.subjectSub-threshold swing(ss)en_US
dc.subjectSubthreshold swingen_US
dc.subjectTrap assisted tunnelingen_US
dc.subjectIonsen_US
dc.titleRecessed-Gate PN iTFET to Improve Subthreshold Swing and Suppress Ambipolaren_US
dc.typeConference Paperen_US
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