Please use this identifier to cite or link to this item:
https://dspace.iiti.ac.in/handle/123456789/5214
| Title: | Recessed-Gate PN iTFET to Improve Subthreshold Swing and Suppress Ambipolar |
| Authors: | Kranti, Abhinav |
| Keywords: | Integrated circuits;Ambipolar;On currents;Recessed gate;Sub-threshold swing(ss);Subthreshold swing;Trap assisted tunneling;Ions |
| Issue Date: | 2018 |
| Publisher: | Institute of Electrical and Electronics Engineers Inc. |
| Citation: | Li, Y. -., Lin, J. -., Ting, Y. -., & Kranti, A. (2018). Recessed-gate PN iTFET to improve subthreshold swing and suppress ambipolar. Paper presented at the 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2018 - Proceedings, doi:10.1109/ICSICT.2018.8564949 |
| Abstract: | In this paper, we propose a new structure of Recessed-Gated-PN TFET with help by Inversion layer and pocket layer (RGPN iTFET) to achieve a great subthreshold swing (SS). The RGPN iTFET has also many advantages, as eliminating ambipolar effect, suppressing trap-assisted tunneling (TAT), raising ON current (I ON (I d @ V G = V D ) and having a much better SS. The simulation results show that our device can reach I ON = 1.61×10 -7 A/um, I ON /I OFF > 3.5×10 7 at V D =0.1V and a minimum and average SS (SS min and SS ave ) of 11.4 and 24 mv/decade respectively. © 2018 IEEE. |
| URI: | https://doi.org/10.1109/ICSICT.2018.8564949 https://dspace.iiti.ac.in/handle/123456789/5214 |
| ISBN: | 9781538644409 |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Electrical Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Altmetric Badge: