Design of 3D cylindrical GAA-TFET based on germanium source with drain underlap for low power applications

Abstract

This paper presents a Cylindrical GAA TFET based on germanium source for low power applications. The proposed device used the merits of low band gap material such as germanium, which is used as a material in the source region. Device investigations have been made in terms of DC characteristics like ION, IOFF, SS, ION/IOFF. The proposed device increases ONcurrent as high as 1.9×10-5A/μm, which corresponds to 7×improvement in ION/IOFF ratio when compared with the Si-GAATFET. Whereas, drain underlap causes increase in series resistance across drain-channel junction, which reduces the electric field by increasing the tunneling barrier width at the drain side, significantly reduced off-state leakage current. This shows the better device performance to address the requirement of ultra-low power applications. © 2017 IEEE. All rights reserved.