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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Khan, Md Arif | en_US |
dc.contributor.author | Kranti, Abhinav | en_US |
dc.contributor.author | Mukherjee, Shaibal | en_US |
dc.date.accessioned | 2022-03-17T01:00:00Z | - |
dc.date.accessioned | 2022-03-17T15:41:35Z | - |
dc.date.available | 2022-03-17T01:00:00Z | - |
dc.date.available | 2022-03-17T15:41:35Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | Singh, R., Khan, M. A., Kranti, A., & Mukherjee, S. (2016). Two-dimensional electron gas in MgZnO/ZnO heterostructures grown by dual-ion beam sputtering. Paper presented at the 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, doi:10.1109/ICIPRM.2016.7528617 | en_US |
dc.identifier.isbn | 9781509019649 | - |
dc.identifier.other | EID(2-s2.0-84992045193) | - |
dc.identifier.uri | https://doi.org/10.1109/ICIPRM.2016.7528617 | - |
dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/5337 | - |
dc.description.abstract | Here, we report the formation of two-dimensional electron gas (2DEG) in MgZnO/ZnO heterostructures grown by dual-ion beam sputtering system. Room-temperature 2DEG density and hall mobility are measured with varying Mg concentration in the barrier layer (5, 15, 20, and 30 at.%). 2DEG density and hall mobility are observed to rise from 3.86×1013 to 9.12×1013 cm-2 and 16.45 to 28.13 cm2/V-s, respectively, with corresponding increase in Mg concentration in barrier layer from 5 to 30 at.%. © 2016 IEEE. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | en_US |
dc.source | 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016 | en_US |
dc.subject | Electron gas | en_US |
dc.subject | Hall mobility | en_US |
dc.subject | Heterojunctions | en_US |
dc.subject | Ion beams | en_US |
dc.subject | Semiconducting indium | en_US |
dc.subject | Sputtering | en_US |
dc.subject | Barrier layers | en_US |
dc.subject | DIBS | en_US |
dc.subject | Dual ion beam sputtering | en_US |
dc.subject | Dual ion beam sputtering systems | en_US |
dc.subject | Mg concentrations | en_US |
dc.subject | Two-dimensional electron gas (2DEG) | en_US |
dc.subject | Two dimensional electron gas | en_US |
dc.title | Two-dimensional electron gas in MgZnO/ZnO heterostructures grown by dual-ion beam sputtering | en_US |
dc.type | Conference Paper | en_US |
Appears in Collections: | Department of Electrical Engineering |
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