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| Title: | Two-dimensional electron gas in MgZnO/ZnO heterostructures grown by dual-ion beam sputtering |
| Authors: | Khan, Md Arif Kranti, Abhinav Mukherjee, Shaibal |
| Keywords: | Electron gas;Hall mobility;Heterojunctions;Ion beams;Semiconducting indium;Sputtering;Barrier layers;DIBS;Dual ion beam sputtering;Dual ion beam sputtering systems;Mg concentrations;Two-dimensional electron gas (2DEG);Two dimensional electron gas |
| Issue Date: | 2016 |
| Publisher: | Institute of Electrical and Electronics Engineers Inc. |
| Citation: | Singh, R., Khan, M. A., Kranti, A., & Mukherjee, S. (2016). Two-dimensional electron gas in MgZnO/ZnO heterostructures grown by dual-ion beam sputtering. Paper presented at the 2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016, doi:10.1109/ICIPRM.2016.7528617 |
| Abstract: | Here, we report the formation of two-dimensional electron gas (2DEG) in MgZnO/ZnO heterostructures grown by dual-ion beam sputtering system. Room-temperature 2DEG density and hall mobility are measured with varying Mg concentration in the barrier layer (5, 15, 20, and 30 at.%). 2DEG density and hall mobility are observed to rise from 3.86×1013 to 9.12×1013 cm-2 and 16.45 to 28.13 cm2/V-s, respectively, with corresponding increase in Mg concentration in barrier layer from 5 to 30 at.%. © 2016 IEEE. |
| URI: | https://doi.org/10.1109/ICIPRM.2016.7528617 https://dspace.iiti.ac.in/handle/123456789/5337 |
| ISBN: | 9781509019649 |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Electrical Engineering |
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