Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5354
Title: Improved photo response of hybrid ZnO/P3HT bilayered photo diode
Authors: Dixit, Tejendra
Palani, Anand Iyamperumal
Singh, Vipul
Keywords: Nanorods;Photodiodes;Surface defects;Anisotropic growth;Defect states of ZnO;Diode characteristics;P3HT;Poly-3-hexylthiophene;Rectification ratio;Zinc oxide (ZnO);ZnO nanorod arrays;Zinc oxide
Issue Date: 2015
Publisher: Institute of Electrical and Electronics Engineers Inc.
Citation: Bilgaiyan, A., Dixit, T., Palani, I. A., & Singh, V. (2015). Improved photo response of hybrid ZnO/P3HT bilayered photo diode. Paper presented at the 2015 IEEE SENSORS - Proceedings, doi:10.1109/ICSENS.2015.7370657
Abstract: In this work we present the fabrication & characterization of hybrid bilayer photodiode based on aligned zinc oxide (ZnO) nanorods and poly(3-hexylthiophene) (P3HT). These functional hybrid bi-layered photodiodes showed excellent diode characteristics & were found to have a high rectification ratio under dark conditions & demonstrated enhanced responsivity under illumination. It was observed that highly anisotropic growth of ZnO occurred with the addition of KMnO4 resulting in oriented growth of ZnO nanorod arrays. Further the effect of in situ addition of KMnO4 on ZnO/P3HT photodiode. Further we studied the effect of ZnO grown for various KMnO4 concentrations on ZnO/P3HT photodiode. The results indicate that the increased surface area of contact between the ZnO nanorods & the P3HT, & reduction in defect states of ZnO led to the better responsivity of photodiode. © 2015 IEEE.
URI: https://doi.org/10.1109/ICSENS.2015.7370657
https://dspace.iiti.ac.in/handle/123456789/5354
ISBN: 9781479982028
Type of Material: Conference Paper
Appears in Collections:Department of Electrical Engineering

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