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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5403
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dc.contributor.authorVishvakarma, Santosh Kumaren_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:41:50Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:41:50Z-
dc.date.issued2014-
dc.identifier.citationGupta, A., Anwer, H., Gupta, D., Vijayvargiya, V., & Vishvakarma, S. K. (2014). A non-volatile memory MONOS device for improved stability applications. Paper presented at the 2014 International Conference on Devices, Circuits and Communications, ICDCCom 2014 - Proceedings, doi:10.1109/ICDCCom.2014.7024690en_US
dc.identifier.isbn9781479960521-
dc.identifier.otherEID(2-s2.0-84933557662)-
dc.identifier.urihttps://doi.org/10.1109/ICDCCom.2014.7024690-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5403-
dc.description.abstractThe stability of Metal-Oxide-Nitride-Oxide-Silicon (MONOS) memory structures remain a major concern for NonVolatile Memory (NVM) devices. In this paper, working on 30-nm technology we have analyzed a MONOS like structure involving the use of multilayer high-k dielectrics as the blocking layer. The work demonstrates the superiority of the structure with multilayered high-k blocking stack over the conventional MONOS structure which uses silicon dioxide as the blocking layer. The structure shows large Programming/Erasing (P/E) window and hence high stability, also better suppression of charge transition when the cell is idle as well as faster programming speed. TCAD Silvaco was used for the simulations. © 2014 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.source2014 International Conference on Devices, Circuits and Communications, ICDCCom 2014 - Proceedingsen_US
dc.subjectDigital storageen_US
dc.subjectDurabilityen_US
dc.subjectMetalsen_US
dc.subjectNonvolatile storageen_US
dc.subjectBlocking layersen_US
dc.subjectHigh-k dielectricen_US
dc.subjectHigh-k materialsen_US
dc.subjectMetal oxide nitride oxide siliconsen_US
dc.subjectNon-volatile memoryen_US
dc.subjectNonvolatile memory devicesen_US
dc.subjectProgramming speeden_US
dc.subjectRetentionen_US
dc.subjectData storage equipmenten_US
dc.titleA non-volatile memory MONOS device for improved stability applicationsen_US
dc.typeConference Paperen_US
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