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| Title: | Impact of Auger recombination on hybrid green light-emitting diode |
| Authors: | Verma, Shruti Mukherjee, Shaibal |
| Keywords: | Auger recombination;Contributing factor;Efficiency droops;Electroluminescence intensity;Electron leakage;High injection;Internal quantum efficiency;Augers;Computer simulation;Diodes;Efficiency;Photonics;Quantum efficiency;Light emitting diodes |
| Issue Date: | 2013 |
| Citation: | Verma, S., & Mukherjee, S. (2013). Impact of auger recombination on hybrid green light-emitting diode. Paper presented at the 4th International Conference on Photonics, ICP 2013 - Conference Proceeding, 56-58. doi:10.1109/ICP.2013.6687066 |
| Abstract: | The Auger recombination is considered to be one of the reasons for the origin of efficiency droop in InGaN-based light-emitting diodes (LEDs). We discuss, through numerical simulation, the impact of Auger recombination on internal quantum efficiency (IQE), luminous power and electroluminescence intensity of hybrid green light-emitting diode. The simulation results indicate that large values of Auger recombination coefficient decreases IQE greatly. Also, electron leakage is found to be a contributing factor towards efficiency droop at high injection current. © 2013 IEEE. |
| URI: | https://doi.org/10.1109/ICP.2013.6687066 https://dspace.iiti.ac.in/handle/123456789/5414 |
| ISBN: | 9781467360753 |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Electrical Engineering |
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