RF performance of ultra low power junctionless MOSFETs

Abstract

In this work, we report on the doping dependence of RF performance metrics of junctionless transistors and compare the same with conventional undoped inversion mode MOSFETs. It is demonstrated that at low drive currents (∼ 25 μA/μm), JL transistors outperform inversion mode MOSFETs as 20% to 40% higher values of cut-off frequency is obtained for all doping concentrations (1019 cm 3 to 3×1019 cm3). It is shown that the junctionless device architecture is advantageous for ultra low power RF applications as parasitic capacitances are significantly reduced. Scaling trends for cut-off frequency (at lower drain currents) with respect to gate length highlights the potential of junctionless architecture for ultra low power applications. © 2013 IEEE.