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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kranti, Abhinav | en_US |
dc.date.accessioned | 2022-03-17T01:00:00Z | - |
dc.date.accessioned | 2022-03-17T15:42:01Z | - |
dc.date.available | 2022-03-17T01:00:00Z | - |
dc.date.available | 2022-03-17T15:42:01Z | - |
dc.date.issued | 2011 | - |
dc.identifier.citation | Kranti, A., Raskin, J. -., & Armstrong, G. A. (2011). Source/drain engineered ultra low power analog/RF UTBB MOSFETs. Paper presented at the 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011, 114-117. doi:10.1109/ULIS.2011.5757997 | en_US |
dc.identifier.isbn | 9781457700903 | - |
dc.identifier.other | EID(2-s2.0-79957981297) | - |
dc.identifier.uri | https://doi.org/10.1109/ULIS.2011.5757997 | - |
dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/5444 | - |
dc.description.abstract | We present a novel optimization technique for ultra-low-power analog/RF Ultra Thin Body BOX (UTBB) MOSFETs. UTBB devices are optimized in bias range corresponding to peak of transconductance-to-current ratio (gm/I ds) and cut-off frequency (fT) product i.e. g mfT/Ids as it represents a sweet spot between speed and power. It is demonstrated that the use of underlap source/drain (S/D) architecture in UTBB devices improve gmfT/Ids, intrinsic voltage gain (AVO), cut-off frequency (fT) and linearity (VIP3) with downscaling. © 2011 IEEE. | en_US |
dc.language.iso | en | en_US |
dc.source | 2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011 | en_US |
dc.subject | Cut-off | en_US |
dc.subject | Down-scaling | en_US |
dc.subject | MOSFETs | en_US |
dc.subject | Optimization techniques | en_US |
dc.subject | Sweet spot | en_US |
dc.subject | Transconductance-to-current ratio | en_US |
dc.subject | Ultra-low power | en_US |
dc.subject | Ultra-thin-body | en_US |
dc.subject | Voltage gain | en_US |
dc.subject | Optimization | en_US |
dc.subject | MOSFET devices | en_US |
dc.title | Source/drain engineered ultra low power analog/RF UTBB MOSFETs | en_US |
dc.type | Conference Paper | en_US |
Appears in Collections: | Department of Electrical Engineering |
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