Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5593
Title: An energy-efficient data-dependent low-power 10T SRAM cell design for LiFi enabled smart street lighting system application
Authors: Gupta, Neha
Sharma, Vishal
Shah, Ambika Prasad
Khan, Sajid
Vishvakarma, Santosh Kumar
Keywords: Energy efficiency;Integrated circuit design;Leakage currents;Lighting fixtures;Static random access storage;Street lighting;System-on-chip;T-cells;65-nm technologies;Data dependent;Energy efficient;Figure of merit (FOM);Stacking effect;Street lighting system;Supply voltages;Temperature variation;Cytology
Issue Date: 2020
Publisher: John Wiley and Sons Ltd
Citation: Gupta, N., Sharma, V., Shah, A. P., Khan, S., Huebner, M., & Vishvakarma, S. K. (2020). An energy-efficient data-dependent low-power 10T SRAM cell design for LiFi enabled smart street lighting system application. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 33(6) doi:10.1002/jnm.2766
Abstract: The LiFi enabled smart street lighting system requires the adaptive SoC to save huge amount of power/energy for data storage, which plays an important role for any urban area development. For the above application, an energy-efficient data-dependent power supplied 10T SRAM cell with half-select free read-decoupled circuit is designed to boost stability while stacking effect controls the leakage current against the process-voltage-temperature variations. CMOS 65 nm technology node is used for the implementation and comparison of various SRAM cells. The proposed cell offers 4×, 1.15×, and 1.66× higher read, hold, and write stability, respectively, as compared with the 6T cell at 0.4 V supply voltage. The improvement of write, read, and leakage power of the proposed 10T cell are 98.03%, 56.25%, and 91.07%, respectively, as compared with the 6T cell at 0.2 V supply. It is also observed that the proposed 10T cell has 88.88% and 85.71% write 0 and write 1 energy, respectively, as compared with the 6T cell at 0.2 V supply voltage. To better assess the cell, we introduced the figure of merit (FOM) and observed that the FOM of the proposed cell is 125× higher as compared with the 6T cell at 0.4 V supply voltage. © 2020 John Wiley & Sons, Ltd
URI: https://doi.org/10.1002/jnm.2766
https://dspace.iiti.ac.in/handle/123456789/5593
ISSN: 0894-3370
Type of Material: Journal Article
Appears in Collections:Department of Electrical Engineering

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