Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5797
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dc.contributor.authorKranti, Abhinaven_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:43:59Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:43:59Z-
dc.date.issued2018-
dc.identifier.citationDwivedi, P., & Kranti, A. (2018). Overcoming biomolecule location-dependent sensitivity degradation through point and line tunneling in dielectric modulated biosensors. IEEE Sensors Journal, 18(23), 9604-9611. doi:10.1109/JSEN.2018.2872016en_US
dc.identifier.issn1530-437X-
dc.identifier.otherEID(2-s2.0-85054665430)-
dc.identifier.urihttps://doi.org/10.1109/JSEN.2018.2872016-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5797-
dc.description.abstractIn this paper, we report on the utility of pocket tunnel field-effect transistors (TFETs) for use as dielectric-modulated biosensor. It is shown that incorporation of a pocket doping in the source facilitates lateral as well as vertical tunneling, which allows biomolecules located at various positions within the cavity to cause a detectable shift in current-voltage characteristics. Considering realistic cases pertaining to varied locations of biomolecules within the cavity and low fill-in (50%) factor, pocket TFET shows enhanced sensitivity over conventional TFET, which can be further improved by lowering the pocket doping. Sensitivity of a pocket TFET maintains detectable values over a wide range of biomolecule locations within the cavity, thereby showing potential for next generation transistor-based biosensor. © 2001-2012 IEEE.en_US
dc.language.isoenen_US
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceIEEE Sensors Journalen_US
dc.subjectBiomoleculesen_US
dc.subjectBiosensorsen_US
dc.subjectCurrent voltage characteristicsen_US
dc.subjectLocationen_US
dc.subjectEnhanced sensitivityen_US
dc.subjectLocation dependentsen_US
dc.subjectPocket dopingen_US
dc.subjectSensitivityen_US
dc.subjectTunnel fieldeffect transistor (TFETs)en_US
dc.subjectVertical tunnelingen_US
dc.subjectTunnel field effect transistorsen_US
dc.titleOvercoming Biomolecule Location-Dependent Sensitivity Degradation Through Point and Line Tunneling in Dielectric Modulated Biosensorsen_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Electrical Engineering

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