Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5797
Title: Overcoming Biomolecule Location-Dependent Sensitivity Degradation Through Point and Line Tunneling in Dielectric Modulated Biosensors
Authors: Kranti, Abhinav
Keywords: Biomolecules;Biosensors;Current voltage characteristics;Location;Enhanced sensitivity;Location dependents;Pocket doping;Sensitivity;Tunnel fieldeffect transistor (TFETs);Vertical tunneling;Tunnel field effect transistors
Issue Date: 2018
Publisher: Institute of Electrical and Electronics Engineers Inc.
Citation: Dwivedi, P., & Kranti, A. (2018). Overcoming biomolecule location-dependent sensitivity degradation through point and line tunneling in dielectric modulated biosensors. IEEE Sensors Journal, 18(23), 9604-9611. doi:10.1109/JSEN.2018.2872016
Abstract: In this paper, we report on the utility of pocket tunnel field-effect transistors (TFETs) for use as dielectric-modulated biosensor. It is shown that incorporation of a pocket doping in the source facilitates lateral as well as vertical tunneling, which allows biomolecules located at various positions within the cavity to cause a detectable shift in current-voltage characteristics. Considering realistic cases pertaining to varied locations of biomolecules within the cavity and low fill-in (50%) factor, pocket TFET shows enhanced sensitivity over conventional TFET, which can be further improved by lowering the pocket doping. Sensitivity of a pocket TFET maintains detectable values over a wide range of biomolecule locations within the cavity, thereby showing potential for next generation transistor-based biosensor. © 2001-2012 IEEE.
URI: https://doi.org/10.1109/JSEN.2018.2872016
https://dspace.iiti.ac.in/handle/123456789/5797
ISSN: 1530-437X
Type of Material: Journal Article
Appears in Collections:Department of Electrical Engineering

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