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https://dspace.iiti.ac.in/handle/123456789/5797
Title: | Overcoming Biomolecule Location-Dependent Sensitivity Degradation Through Point and Line Tunneling in Dielectric Modulated Biosensors |
Authors: | Kranti, Abhinav |
Keywords: | Biomolecules;Biosensors;Current voltage characteristics;Location;Enhanced sensitivity;Location dependents;Pocket doping;Sensitivity;Tunnel fieldeffect transistor (TFETs);Vertical tunneling;Tunnel field effect transistors |
Issue Date: | 2018 |
Publisher: | Institute of Electrical and Electronics Engineers Inc. |
Citation: | Dwivedi, P., & Kranti, A. (2018). Overcoming biomolecule location-dependent sensitivity degradation through point and line tunneling in dielectric modulated biosensors. IEEE Sensors Journal, 18(23), 9604-9611. doi:10.1109/JSEN.2018.2872016 |
Abstract: | In this paper, we report on the utility of pocket tunnel field-effect transistors (TFETs) for use as dielectric-modulated biosensor. It is shown that incorporation of a pocket doping in the source facilitates lateral as well as vertical tunneling, which allows biomolecules located at various positions within the cavity to cause a detectable shift in current-voltage characteristics. Considering realistic cases pertaining to varied locations of biomolecules within the cavity and low fill-in (50%) factor, pocket TFET shows enhanced sensitivity over conventional TFET, which can be further improved by lowering the pocket doping. Sensitivity of a pocket TFET maintains detectable values over a wide range of biomolecule locations within the cavity, thereby showing potential for next generation transistor-based biosensor. © 2001-2012 IEEE. |
URI: | https://doi.org/10.1109/JSEN.2018.2872016 https://dspace.iiti.ac.in/handle/123456789/5797 |
ISSN: | 1530-437X |
Type of Material: | Journal Article |
Appears in Collections: | Department of Electrical Engineering |
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