A Compact Electrical Modelling for Top-Gated Doped Graphene Field-Effect Transistor

Abstract

In this paper, we have developed an inclusive model for top-gated doped graphene field-effect transistor (GFET). The proposed model is concise and accurate for calculations of the electrical parameters that are used in digital circuit design. The doping in single layer graphene sheet is one of the ways to create a bandgap as well as to introduce the threshold voltage (V TH) concept in GFET. Further, the modelled expressions are used for estimation of quantum capacitance (Cq), which is used for the modelling of drain current (ID), small-signal transconductance gain (gm), output resistance (ro), and figures of merit such as intrinsic voltage gain (AV), transconductance efficiency (gm/ID), and cut-off frequency (fT). © 2018, © 2018 IETE.