Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/5865
Full metadata record
DC FieldValueLanguage
dc.contributor.authorManivannan, Anbarasuen_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-17T15:44:27Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-17T15:44:27Z-
dc.date.issued2018-
dc.identifier.citationPandey, S. K., & Manivannan, A. (2018). A fully automated temperature-dependent resistance measurement setup using van der pauw method. Review of Scientific Instruments, 89(3) doi:10.1063/1.4998340en_US
dc.identifier.issn0034-6748-
dc.identifier.otherEID(2-s2.0-85043522649)-
dc.identifier.urihttps://doi.org/10.1063/1.4998340-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/5865-
dc.description.abstractThe van der Pauw (VDP) method is widely used to identify the resistance of planar homogeneous samples with four contacts placed on its periphery. We have developed a fully automated thin film resistance measurement setup using the VDP method with the capability of precisely measuring a wide range of thin film resistances from few mΩ up to 10 GΩ under controlled temperatures from room-temperature up to 600 °C. The setup utilizes a robust, custom-designed switching network board (SNB) for measuring current-voltage characteristics automatically at four different source-measure configurations based on the VDP method. Moreover, SNB is connected with low noise shielded coaxial cables that reduce the effect of leakage current as well as the capacitance in the circuit thereby enhancing the accuracy of measurement. In order to enable precise and accurate resistance measurement of the sample, wide range of sourcing currents/voltages are pre-determined with the capability of auto-tuning for ∼12 orders of variation in the resistances. Furthermore, the setup has been calibrated with standard samples and also employed to investigate temperature dependent resistance (few Ω-10 GΩ) measurements for various chalcogenide based phase change thin films (Ge2Sb2Te5, Ag5In5Sb60Te30, and In3SbTe2). This setup would be highly helpful for measurement of temperature-dependent resistance of wide range of materials, i.e., metals, semiconductors, and insulators illuminating information about structural change upon temperature as reflected by change in resistances, which are useful for numerous applications. © 2018 Author(s).en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.sourceReview of Scientific Instrumentsen_US
dc.subjectCapacitanceen_US
dc.subjectCurrent voltage characteristicsen_US
dc.subjectElectric resistance measurementen_US
dc.subjectStructural metalsen_US
dc.subjectAccuracy of measurementsen_US
dc.subjectControlled temperatureen_US
dc.subjectHomogeneous samplesen_US
dc.subjectMeasurement of temperatureen_US
dc.subjectPhase change thin filmsen_US
dc.subjectResistance measurementen_US
dc.subjectTemperature-dependent resistanceen_US
dc.subjectVan der Pauw methoden_US
dc.subjectThin filmsen_US
dc.titleA fully automated temperature-dependent resistance measurement setup using van der Pauw methoden_US
dc.typeJournal Articleen_US
Appears in Collections:Department of Electrical Engineering

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Altmetric Badge: