Please use this identifier to cite or link to this item:
https://dspace.iiti.ac.in/handle/123456789/5865
Title: | A fully automated temperature-dependent resistance measurement setup using van der Pauw method |
Authors: | Manivannan, Anbarasu |
Keywords: | Capacitance;Current voltage characteristics;Electric resistance measurement;Structural metals;Accuracy of measurements;Controlled temperature;Homogeneous samples;Measurement of temperature;Phase change thin films;Resistance measurement;Temperature-dependent resistance;Van der Pauw method;Thin films |
Issue Date: | 2018 |
Publisher: | American Institute of Physics Inc. |
Citation: | Pandey, S. K., & Manivannan, A. (2018). A fully automated temperature-dependent resistance measurement setup using van der pauw method. Review of Scientific Instruments, 89(3) doi:10.1063/1.4998340 |
Abstract: | The van der Pauw (VDP) method is widely used to identify the resistance of planar homogeneous samples with four contacts placed on its periphery. We have developed a fully automated thin film resistance measurement setup using the VDP method with the capability of precisely measuring a wide range of thin film resistances from few mΩ up to 10 GΩ under controlled temperatures from room-temperature up to 600 °C. The setup utilizes a robust, custom-designed switching network board (SNB) for measuring current-voltage characteristics automatically at four different source-measure configurations based on the VDP method. Moreover, SNB is connected with low noise shielded coaxial cables that reduce the effect of leakage current as well as the capacitance in the circuit thereby enhancing the accuracy of measurement. In order to enable precise and accurate resistance measurement of the sample, wide range of sourcing currents/voltages are pre-determined with the capability of auto-tuning for ∼12 orders of variation in the resistances. Furthermore, the setup has been calibrated with standard samples and also employed to investigate temperature dependent resistance (few Ω-10 GΩ) measurements for various chalcogenide based phase change thin films (Ge2Sb2Te5, Ag5In5Sb60Te30, and In3SbTe2). This setup would be highly helpful for measurement of temperature-dependent resistance of wide range of materials, i.e., metals, semiconductors, and insulators illuminating information about structural change upon temperature as reflected by change in resistances, which are useful for numerous applications. © 2018 Author(s). |
URI: | https://doi.org/10.1063/1.4998340 https://dspace.iiti.ac.in/handle/123456789/5865 |
ISSN: | 0034-6748 |
Type of Material: | Journal Article |
Appears in Collections: | Department of Electrical Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.
Altmetric Badge: