Occurrence of zero gate oxide thickness coefficient in junctionless transistors

Abstract

In this paper, we report on the occurrence of Zero Gate Oxide Thickness Coefficient (Z T o x C) in junctionless transistors. It is shown that due to bipolar effects, drain current increases with an increase in oxide thickness up to a certain gate voltage (V Z T o x C), whereas beyond (V Z T o x C), current follows the conventional transistor theory and reduces with an increment in gate oxide thickness. These two different trends lead to a condition of drain current being independent of oxide thickness at the gate bias corresponding to V Z T o x C. The occurrence of Z T o x C classifies the predominant conduction mechanism into bipolar or unipolar mode in junctionless transistors. © 2013 AIP Publishing LLC.