High-performance junctionless MOSFETs for ultralow-power analog/RF applications

Abstract

In this letter, we demonstrate the usefulness of ultralow-power (ULP) junctionless (JL) MOSFETs in achieving improved analog/RF metrics as compared to nonunderlap and underlap MOSFETs. At a drain current (Irm ds) of 10 \mu \hboxA/\mu\hboxm, JL devices achieve two times higher values of cutoff frequency (f-T) and maximum oscillation frequency (frm MAX) along with 65% improvement in voltage gain (Arm VO) in comparison to conventional nonunderlap MOSFETs. ULP JL devices, which do not require source/drain (S/D) profile optimization, can perform comparably to underlap devices, thereby relaxing the stringent process constraints associated with S/D profile optimization in nanoscale devices. The results highlight new opportunities for realizing future ULP analog/RF design with JL transistors. © 2012 IEEE.