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https://dspace.iiti.ac.in/handle/123456789/6153
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Manivannan, Anbarasu | en_US |
| dc.date.accessioned | 2022-03-17T01:00:00Z | - |
| dc.date.accessioned | 2022-03-17T15:46:45Z | - |
| dc.date.available | 2022-03-17T01:00:00Z | - |
| dc.date.available | 2022-03-17T15:46:45Z | - |
| dc.date.issued | 2012 | - |
| dc.identifier.citation | Anbarasu, M., Wimmer, M., Bruns, G., Salinga, M., & Wuttig, M. (2012). Nanosecond threshold switching of GeTe 6 cells and their potential as selector devices. Applied Physics Letters, 100(14) doi:10.1063/1.3700743 | en_US |
| dc.identifier.issn | 0003-6951 | - |
| dc.identifier.other | EID(2-s2.0-84859799159) | - |
| dc.identifier.uri | https://doi.org/10.1063/1.3700743 | - |
| dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/6153 | - |
| dc.description.abstract | Time-resolved threshold switching characteristics including transient parameters such as delay time and holding voltage are reported for a nanoscale GeTe 6 Ovonic threshold switching (OTS) device. The voltage dependence of the threshold switching process has been studied, revealing switching in less than 5 ns in the fastest case. A constant holding voltage is observed for the different voltage pulses applied, which is an indicative for a stable on state in the amorphous phase. In addition, the potential of GeTe 6 devices as OTS selectors is validated. © 2012 American Institute of Physics. | en_US |
| dc.language.iso | en | en_US |
| dc.source | Applied Physics Letters | en_US |
| dc.subject | Amorphous phase | en_US |
| dc.subject | Delay Time | en_US |
| dc.subject | Holding voltage | en_US |
| dc.subject | Nano scale | en_US |
| dc.subject | Threshold switching | en_US |
| dc.subject | Time-resolved | en_US |
| dc.subject | Transient parameter | en_US |
| dc.subject | Voltage dependence | en_US |
| dc.subject | Voltage pulse | en_US |
| dc.subject | Electric potential | en_US |
| dc.subject | Power quality | en_US |
| dc.subject | Switching | en_US |
| dc.title | Nanosecond threshold switching of GeTe 6 cells and their potential as selector devices | en_US |
| dc.type | Journal Article | en_US |
| Appears in Collections: | Department of Electrical Engineering | |
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