Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/6153
Title: Nanosecond threshold switching of GeTe 6 cells and their potential as selector devices
Authors: Manivannan, Anbarasu
Keywords: Amorphous phase;Delay Time;Holding voltage;Nano scale;Threshold switching;Time-resolved;Transient parameter;Voltage dependence;Voltage pulse;Electric potential;Power quality;Switching
Issue Date: 2012
Citation: Anbarasu, M., Wimmer, M., Bruns, G., Salinga, M., & Wuttig, M. (2012). Nanosecond threshold switching of GeTe 6 cells and their potential as selector devices. Applied Physics Letters, 100(14) doi:10.1063/1.3700743
Abstract: Time-resolved threshold switching characteristics including transient parameters such as delay time and holding voltage are reported for a nanoscale GeTe 6 Ovonic threshold switching (OTS) device. The voltage dependence of the threshold switching process has been studied, revealing switching in less than 5 ns in the fastest case. A constant holding voltage is observed for the different voltage pulses applied, which is an indicative for a stable on state in the amorphous phase. In addition, the potential of GeTe 6 devices as OTS selectors is validated. © 2012 American Institute of Physics.
URI: https://doi.org/10.1063/1.3700743
https://dspace.iiti.ac.in/handle/123456789/6153
ISSN: 0003-6951
Type of Material: Journal Article
Appears in Collections:Department of Electrical Engineering

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