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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Palani, Anand Iyamperumal | en_US |
| dc.date.accessioned | 2022-03-17T01:00:00Z | - |
| dc.date.accessioned | 2022-03-21T10:51:18Z | - |
| dc.date.available | 2022-03-17T01:00:00Z | - |
| dc.date.available | 2022-03-21T10:51:18Z | - |
| dc.date.issued | 2019 | - |
| dc.identifier.citation | Paneerselvam, E., Vasa, N. J., Nakamura, D., Palani, I. A., Higashihata, M., Ramachandra Rao, M. S., & Thomas, T. (2019). Pulsed laser deposition of SiC thin films and influence of laser-assisted annealing. Paper presented at the Materials Today: Proceedings, , 35 312-317. doi:10.1016/j.matpr.2020.01.535 | en_US |
| dc.identifier.issn | 2214-7853 | - |
| dc.identifier.other | EID(2-s2.0-85097278853) | - |
| dc.identifier.uri | https://doi.org/10.1016/j.matpr.2020.01.535 | - |
| dc.identifier.uri | https://dspace.iiti.ac.in/handle/123456789/6771 | - |
| dc.description.abstract | Silicon carbide (SiC) thin films were grown by pulsed laser deposition (PLD) on Si (1 0 0) substrates at a substrate temperature of 800 °C. Besides, laser annealing was performed on the post deposited intrinsic amorphous SiC films using Nd3+:YAG 355 nm laser in the Ar environment. The laser-annealed samples showed the crystalline characteristics. Crystalline characteristics of PLD grown, laser annealed samples were identified by X-ray diffraction (XRD), Raman analysis. Numerical analysis performed on SiC/Si interface to investigate the temperature distribution, to understand the mechanism of laser assisted annealing. © 2019 Elsevier Ltd. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier Ltd | en_US |
| dc.source | Materials Today: Proceedings | en_US |
| dc.title | Pulsed laser deposition of SiC thin films and influence of laser-assisted annealing | en_US |
| dc.type | Conference Paper | en_US |
| Appears in Collections: | Department of Mechanical Engineering | |
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