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Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/7389
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dc.contributor.authorMazumder, Kushalen_US
dc.contributor.authorSharma, Alfaen_US
dc.contributor.authorKumar, Y. B.Kishoreen_US
dc.contributor.authorShirage, Parasharam Marutien_US
dc.date.accessioned2022-03-17T01:00:00Z-
dc.date.accessioned2022-03-21T11:11:33Z-
dc.date.available2022-03-17T01:00:00Z-
dc.date.available2022-03-21T11:11:33Z-
dc.date.issued2019-
dc.identifier.citationMazumder, K., Sharma, A., Kumar, Y., & Shirage, P. M. (2019). Temperature dependent I-V characteristics of ni doped topological insulator Bi2Se3 nanoparticles. Paper presented at the AIP Conference Proceedings, , 2115 doi:10.1063/1.5112986en_US
dc.identifier.isbn9780735418516-
dc.identifier.issn0094-243X-
dc.identifier.otherEID(2-s2.0-85069774537)-
dc.identifier.urihttps://doi.org/10.1063/1.5112986-
dc.identifier.urihttps://dspace.iiti.ac.in/handle/123456789/7389-
dc.description.abstractNanostructures of Bismuth Selenide (Bi2Se3), a 3D topological insulator material and Nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the I-V characteristics. The structural, morphological and optical properties were characterized by XRD, FESEM and UV-vis spectroscopy respectively. The temperature dependent I-V shows an enhancement in the current carrying properties of Ni doped Bi2Se3 due to surface defects and tailoring of optical properties. This study proposes applicability of Bi2Se3 topological insulators as next generation quantum computing materials. © 2019 Author(s).en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.sourceAIP Conference Proceedingsen_US
dc.titleTemperature dependent I-V characteristics of Ni doped topological insulator Bi2Se3 nanoparticlesen_US
dc.typeConference Paperen_US
Appears in Collections:Department of Metallurgical Engineering and Materials Sciences

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