Please use this identifier to cite or link to this item: https://dspace.iiti.ac.in/handle/123456789/7389
Title: Temperature dependent I-V characteristics of Ni doped topological insulator Bi2Se3 nanoparticles
Authors: Mazumder, Kushal
Sharma, Alfa
Kumar, Y. B.Kishore
Shirage, Parasharam Maruti
Issue Date: 2019
Publisher: American Institute of Physics Inc.
Citation: Mazumder, K., Sharma, A., Kumar, Y., & Shirage, P. M. (2019). Temperature dependent I-V characteristics of ni doped topological insulator Bi2Se3 nanoparticles. Paper presented at the AIP Conference Proceedings, , 2115 doi:10.1063/1.5112986
Abstract: Nanostructures of Bismuth Selenide (Bi2Se3), a 3D topological insulator material and Nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the I-V characteristics. The structural, morphological and optical properties were characterized by XRD, FESEM and UV-vis spectroscopy respectively. The temperature dependent I-V shows an enhancement in the current carrying properties of Ni doped Bi2Se3 due to surface defects and tailoring of optical properties. This study proposes applicability of Bi2Se3 topological insulators as next generation quantum computing materials. © 2019 Author(s).
URI: https://doi.org/10.1063/1.5112986
https://dspace.iiti.ac.in/handle/123456789/7389
ISBN: 9780735418516
ISSN: 0094-243X
Type of Material: Conference Paper
Appears in Collections:Department of Metallurgical Engineering and Materials Sciences

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