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| Title: | Structure, electronic and photoluminescence study of Si doped ZnO nano-particles |
| Authors: | Kumar, Sunil Shirage, Parasharam Maruti Sen, Somaditya |
| Keywords: | Energy gap;II-VI semiconductors;Manufacture;Nanoparticles;Sol-gels;Strain;Synthesis (chemical);X ray diffraction;Zinc oxide;Doped ZnO;Oxygen deficiency;Urbach energy;Wurzite;Silicon |
| Issue Date: | 2016 |
| Publisher: | Institute of Physics Publishing |
| Citation: | Bajpai, G., Srivastava, T., Kumar, S., Shirage, P., & Somaditya, S. (2016). Structure, electronic and photoluminescence study of si doped ZnO nano-particles. Paper presented at the IOP Conference Series: Materials Science and Engineering, , 149(1) doi:10.1088/1757-899X/149/1/012186 |
| Abstract: | A detailed structural and electronicstudy of sol-gel synthesized and 1100°C calcined Zn1-xSixO (0 ≤ x ≤ 0.06) nano-particles were carried out using XRD, FESEM, UV- vis/PL spectroscopy studies. XRD reveals wurzite structure at (0 ≤ x ≤ 0.03) after which some extra phase is seen which is also supported by FESEM images.UVs spectroscopy revealed that band gap increases and urbach energy decreases with substitution. Due to doping of Si4+, oxygen deficiency is decreased which improve structural properties in spite of introduction of strains due to lattice contraction.Photoluminescence studiesrevealed that the reduction in defects state in the sample with Si4+ substitution. © Published under licence by IOP Publishing Ltd. |
| URI: | https://doi.org/10.1088/1757-899X/149/1/012186 https://dspace.iiti.ac.in/handle/123456789/7412 |
| ISSN: | 1757-8981 |
| Type of Material: | Conference Paper |
| Appears in Collections: | Department of Metallurgical Engineering and Materials Sciences |
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